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Intel and Micron developed the revolutionary 3D XPoint persistent memory, which melds the speed and endurance of DRAM with the persistence of data storage devices, in a secret joint effort that spanned a decade. The first formal announcement came in 2021.

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As such, for memory cells that store more than one-bit per cell, there is a delay between when programming starts and when programming finishes for each particular cell. If an asynchronous power loss (APL) occurs prior to completion of programming, some cells might be corrupted or have unexpected values. In certain examples, APL can refer to any unexpected or sudden loss of power, shutdown, or reset. Under normal circumstances, such as in response to a command to shut down (or enter sleep or hibernate modes) from a host device, etc, power is not removed from a storage system until the storage system acknowledges that unfinished write operations or saves are complete and addressing information is updated and stored. An APL may lead to data and addressing errors on the storage system. Back-to-back APL may be even more destructive.

Method examples described herein can be machine or computer-implemented at least in part. Some examples can include a computer-readable medium or machine-readable medium encoded with instructions operable to configure an electronic device to perform methods as described in the above examples. An implementation of such methods can include code, such as microcode, assembly language code, a higher-level language code, or the like. Such code can include computer readable instructions for performing various methods. The code may form portions of computer program products. Further, the code can be tangibly stored on one or more volatile or non-volatile tangible computer-readable media, such as during execution or at other times.

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Intel also fabs its own 3D XPoint media in a New Mexico fab, but it’s unclear how much volume the company currently produces. While Intel is in the process of selling its own NAND flash and SSD businesses to SK hynix, it’s fully possible that it could be a potential suitor to purchase Micron’s Utah fab.

Thus, to store three-bits per cell (n=3), the memory cell may be programmed to one of eight different (2{circumflex over ( )}3) voltage levels, each voltage level corresponds to one of each possible combination of bit states. Due to differences in manufacturing for each cell and certain operations of the memory, the voltage of each value combination may vary from cell to cell and each possible value combination may be represented by a voltage range.

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Another option is padding dummy data on the fake programmed page. If an APL happens during programming of the dummy data, the system may not recover the data of the last written page and may not determine that the one or more last written pages are fake programmed pages. Thus, the system may cause such pages to be padded with dummy data again. Back-to-back APLs may cause the one or more pages to be programmed with dummy data several times.

Specific tiers in the 3D memory array, and accordingly, specific memory cells in a string, can be accessed or controlled using respective access lines. Groups of select gates can be accessed using various select lines. For example, first-third A0 SGD 426A0-428A0 can be accessed using an A0 SGD line SGDA0 425A0, first-third An SGD 426An-428An can be accessed using an An SGD line SGDAn 425An, first-third B0 SGD 426B0-428B0 can be accessed using a B0 SGD line SGDB0 425B0, and first-third Bn SGD 426Bn 428Bn can be accessed using a Bn SGD line SGDBn 425Bn. First-third A0 SGS 431A0-433A0 and first-third An SGS 431An-433An can be accessed using a gate select line SGS0 430A, and first-third B0 SGS 431B0-433B0 and first-third Bn SGS 431Bn-433Bn can be accessed using a gate select line SGS1 430B.

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As the distance between an applied program voltage and the non-targeted memory cells increases, the pass voltage required to refrain from programming the non-targeted memory cells can decrease. For example, where a programming voltage of 15V is applied to WL40, a pass voltage of 10V can be applied to WL30 and WL50, a pass voltage of 8V can be applied to WL20 and WL60, a pass voltage of 7V can be applied to WL10 and WL70, etc. In other examples, the pass voltages, or number of word lines, etc, can be higher or lower, or more or less.

As one example, a TLC memory device can include 18,592 bytes (B) of data per page, 1536 pages per block, 548 blocks per plane, and 4 planes per device. As another example, an MLC memory device can include 18,592 bytes (B) of data per page, 1024 pages per block, 548 blocks per plane, and 4 planes per device, but with half the required write time and twice the program/erase (P/E) cycles as a corresponding TLC memory device. Other examples can include other numbers or arrangements. A super block can include a combination of multiple blocks, such as from different planes, etc, and a window can refer to a stripe of a super block, typically matching a portion covered by a physical-to-logical (P2L) table chunk, etc, and a super page can include a combination of multiple pages.

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Depending on the results of your troubleshooting adventures, it may be time to upgrade some of your system’s hardware. As software and PC technology progress, so does hardware requirements.

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Sometimes, the Micro SD card is not showing up on Android mobile or in My Computer. Sometimes, it appears but cannot open. Sometimes, you might get the error 'Please insert a disk into removable disk', 'Android phone cannot find micro SD card' or 'There are no valid media'. In all these situations, how to fix unreadable SD card and recover data becomes a problem.

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It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. Also, in the above Detailed Description, various features may be grouped together to streamline the disclosure. This should not be interpreted as intending that an unclaimed disclosed feature is essential to any claim. Rather, inventive subject matter may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment, and it is contemplated that such embodiments can be combined with each other in various combinations or permutations. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

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The storage system 618 can include a machine-readable storage medium (also known as a computer-readable medium) on which is stored one or more sets of instructions 626 or software embodying any one or more of the methodologies or functions described herein. The instructions 626 can also reside, completely or at least partially, within the main memory 604 or within the processing device 602 during execution thereof by the computer system 600, the main memory 604 and the processing device 602 also constituting machine-readable storage media.

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In various examples, the components, controllers, processors, units, engines, or tables described herein can include, among other things, physical circuitry or firmware stored on a physical device. As used herein, “processor” means any type of computational circuit such as, but not limited to, a microprocessor, a microcontroller, a graphics processor, a digital signal processor (DSP), or any other type of processor or processing circuit, including a group of processors or mufti-core devices.

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The difference between these two types of scans is made by the duration of the process. The second one is designed to be more effective but it also takes more time to complete.

Software problems are a little more challenging to pin down. Still, if the memory management error is a relatively new phenomenon, you could try undoing some of your recent software installations to see if it fixes the problem.

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Memory devices include individual memory die, which may, for example, include including a storage region comprising one or more arrays of memory cells, implementing one (or more) selected storage technologies. Such memory die will often include support circuitry for operating the memory array(s). Other examples, sometimes known generally as “managed memory devices,” include assemblies of one or more memory die associated with controller functionality configured to control operation of the one or more memory die. Such controller functionality can simplify interoperability with an external device, as a “host” as discussed later herein.

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Embodiments of the present disclosure are described in the example of managed memory devices implementing NAND flash memory cells, termed “managed NAND” devices. These examples, however, are not limiting on the scope of the disclosure, which may be implemented in other forms of memory devices and/or with other forms of storage technology.

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SSDs use non-volatile memory cells, such as flash memory cells to obviate internal battery supply requirements, thus allowing the drive to be more versatile and compact. Managed NAND devices can be used as primary or ancillary memory in various forms of electronic devices, and are commonly used in mobile devices.

As gaming hardware demand has remained strong in 2021 and the pandemic has thrown supply chain operations out of gear, it is not surprising to see why AMD and NVIDIA are finding it difficult to gather a critical component that goes into their latest GPUs (graphics processing units). But the problems faced by the two tech giants could turn out to be a tailwind for Micron Technology (NASDAQ: MU).

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One or more devices external to the memory device 500 can communicate with the memory device 500 using the I/O lines (DQ0-DQN) 508, address lines 516 (A0-AX), or control lines 532. The input/output (I/O) circuit 526 can transfer values of data in or out of the memory device 500, such as in or out of the page buffer 522 or the memory array 502, using the I/O lines 508, according to, for example, the control lines 532 and address lines 516. The page buffer 522 can store data received from the one or more devices external to the memory device 500 before the data is programmed into relevant portions of the memory array 502, or can store data read from the memory array 502 before the data is transmitted to the one or more devices external to the memory device 500.

One or more of the host device 105 or the storage system 110 can include interface circuitry, such as host interface circuitry (I/F CKT) 107 or storage interface circuitry (I/F CKT) 117, configured to enable communication between components of the host system 100. Each interface circuitry can include one or more UFS Interconnect (UIC) layers.

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The first thing you should do is launch Windows 10 in safe mode with basic drivers. This action allows you to check whether you still receive the BSOD Memory Management error. Essentially, this shuts down any processes the computer doesn’t need. If the memory management error ceases, you’ll know it isn’t hardware but rather something in the software, such as a patch in an update or a driver. If the problem still occurs, you may need to replace some faulty hardware. To boot your system in Safe Mode, follow the steps below.

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If the APL occurs towards the end of the program period, the last written page data may be recoverable. In such case, the controller will not pad dummy data onto the last written page, but instead can relocate the data to the next truly empty page.

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Intel’s own efforts to productize Optane, which uses the 3D XPoint media, have met with slow but steady uptake in the data center but fizzled in the consumer market. As such, Intel ceased production of all Optane devices for desktop PCs in January 2021. The company continues to develop both storage and persistent memory DIMMs for the enterprise markets. In fact, Intel recently unveiled its new Optane SSD P5800X for servers. This new device brings second-gen Optane to market for the first time, signaling that Intel remains committed to using the exotic memory for the enterprise market.

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In an example, if a storage system includes multiple memory devices, the combination or pattern of blocks can extend across the multiple memory devices. The term “stripe” can refer to a pattern of combination or pattern of a piece or pieces of a thing or things. For example, a stripe of a super block can refer to a combination or pattern of pages from each block in the super block.

In such managed memory devices, the controller functionality may be implemented on one or more die also incorporating a memory array, or on a separate die). In other examples, one or more memory devices may be combined with controller functionality to form a solid-stage drive (SSD) storage volume.

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One strategy to deal with an APL event during programming is to close the block and start a new one. In this scenario, back-to-back APL may generate many partial blocks (and therefore wasted space). This may prematurely exhaust free blocks, so a better strategy may be to continue to use the block that was open during the one or more APL.

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In a networked deployment, the machine 600 may operate in the capacity of a server machine, a client machine, or both in server-client network environments. In an example, the machine 600 may act as a peer machine in peer-to-peer (P2P) (or other distributed) network environment. The machine 600 may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a mobile telephone, a web appliance, an IoT device, automotive system, or any machine capable of executing instructions (sequential or otherwise) that specify actions to be taken by that machine.

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In all these situations, how to fix unreadable SD card and recover data becomes a problem

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In certain examples, if the number of detected errors for one or more of the error counts is above a threshold, the bit error can be referred to as an uncorrectable bit error. The management tables can maintain a count of correctable or uncorrectable bit errors, among other things. In an example, the management tables can include translation tables or a L2P mapping.

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SFC Scanner will now run through your system, seeing if it finds any disk errors to fix. Even if it doesn’t find anything, some users have found that their computers play nicer after a full scan.

It is being reported that NVIDIA and AMD's graphics card shortage could last for at least the next three months, and a lack of GDDR6 memory is being blamed for the holdup. GDDR6 is a specialized type of DRAM used in gaming consoles and graphics cards. They are more powerful than the standard DRAM we typically use in our computers.

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Teresa Kersten, an employee of LinkedIn, a Microsoft subsidiary, is a member of The Motley Fool’s board of directors. Harsh Chauhan has no position in any of the stocks mentioned. The Motley Fool owns shares of and recommends Microsoft and NVIDIA. The Motley Fool has a disclosure policy.

Likewise, Micron earned just $0/32 per share in net income over the past year, putting the current PE ratio at about 50, what looks like an astronomical valuation. But DRAM and NAND prices will eventually stabilize, ending the string of losses that has plagued Micron in recent quarters. On average, Micron's earnings will be somewhere in between its record profits of 2021 and its middling profits of the past year.

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If higher DRAM and NAND prices fail to boost the company's profitability soon, Micron stock could get knocked down. That's a risk for investors with shorter time horizons, but not so much for long-term investors willing to wait out this rough patch. Given its valuation, Micron looks like an average investment at the moment, with an average amount of risk.

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Specific pieces of software often link to memory management errors. You can try disabling and re-enabling newer software to see if that fixes the BSOD, or you can reload Windows 10 entirely (although this is a nuclear option).

The processing device 602 can represent one or more general-purpose processing devices such as a microprocessor, a central processing unit, or the like. More particularly, the processing device can be a complex instruction set computing (CISC) microprocessor, reduced instruction set computing (RISC) microprocessor, very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets, or processors implementing a combination of instruction sets. The processing device 602 can also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like. The processing device 602 can be configured to execute instructions 626 for performing the operations and steps discussed herein. The computer system 600 can further include a network interface device 608 to communicate over a network 620.

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SFC Scanner is a Microsoft tool for detecting various problems with your system, and running it seems to have solved some people’s memory management woes. Once again, this step should also be performed in Safe Mode like Step 1 and Step 2 above.